We have used in situ resistance versus temperature measurements to demonstrate that a 60 nm titanium thin film on polycrystalline silicon heated at rates up to 3000-degrees-C/min always forms high-resistivity base-centered orthorhombic C49-TiSi2 before the low-resistivity face-centered orthorhombic C54-TiSi2 Phase. Kinetic analysis of the shift in transformation temperatures with heating rate indicates that the activation energies for the formation of C49-TiSi2 and C54-TiSi2 are 2.1 +/- 0.2 and 3.8 +/- 0.5 eV, respectively, when formed du ring the same annealing cycle. The higher activation energy of formation of C54-TiSi2 as compared to C49-TiSi2 suggests that under very high heating rates and annealing temperatures, the formation of C49-TiSi2 before C54-TiSi2 might be completely or partially bypassed
