Bijkerk, F.

Stilhano Vilas Boas, Cristiane Regina

Sturm, J.M.

English

The understanding of oxygen interaction and diffusion in ultrathin oxide films is of great importance for their use in many applications, such as electronic devices and protective layers of extreme ultraviolet optics. In this work, we analyse oxygen diffusion in ultrathin oxide films through isotope exchange depth profiling (IEDP) with low energy ion scattering (LEIS). The high sensitivity of LEIS allows quasi-static measurements, where there is no influence of ion damage. LEIS also has good sensitivity to mass differences, which enables the correlation of isotope exchange kinetics at surfaces and in-depth penetration with high accuracy of atomic concentrations. This method was used to study atomic O exposure of films of ZrO2 and MoO3 of 2 nm to 10 nm, which were reactively deposited via DC magnetron sputtering. The diffusion profiles indicate a higher diffusion constant in the outermost monolayers of the oxide film, which may be caused by presence of oxygen vacancies in the film

University of Twente Research Information

Oxygen diffusion analysis in transition metal oxides by Low Energy Ion Scattering C. R. S. Vilas Boas1*, J. M. Sturm1, F. Bijkerk11 Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, Netherlands* c.r.stilhanovilasboas@utwente.nlAbstract The understanding of oxygen interaction and diffusion in ultrathin oxide films is of great importance for their use in many applications, such as electronic devices and protective layers of extreme ultraviolet optics. In this work, we analyse oxygen diffusion in ultrathin oxide films through isotope exchange depth profiling (IEDP) with low energy ion scattering (LEIS). The high sensitivity of LEIS allows quasi-static measurements, where there is no influence of ion damage. LEIS also has good sensitivity to mass differences, which enables the correlation of isotope exchange kinetics at surfaces and in-depth penetration with high accuracy of atomic concentrations. This method was used to study atomic O exposure of films of ZrO2 and MoO3 of 2 nm to 10 nm, which were reactively deposited via DC magnetron sputtering. The diffusion profiles indicate a higher diffusion constant in the outermost monolayers of the oxide film, which may be caused by presence of oxygen vacancies in the film. 

Oxygen diffusion analysis in transition metal oxides by Low Energy Ion Scattering

https://ris.utwente.nl/ws/files/169573895/Physics_at_Veldhoven_2019_abstract_Cristiane.docx

Oxygen diffusion analysis in transition metal oxides by Low Energy Ion Scattering

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University of Twente Research Information