Flokstra, J.

Hilgenkamp, J.W.M.

IJsselsteijn, R.P.J.

Jaszczuk, W.

Lindgård, Per-Anker

Rijnders, A.J.H.M.

Rogalla, H.

van de Riet, P.

English

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Towards a high Tc DC-SQUID magnetometer

University of Twente Research Information

?>*«)3>OOOlt>A -j^t D I Risø-R-628(EN) Proceedings of the Joint Nordic Spring Meeting '92 Edited by Per-Anker Lindgård J O I N T NORDIC S P R I N G M E E T I N G 7-10 MAY 1992 Nyborg Strand, Denmark Risø National Laboratory, Roskilde, Denmark May 1992 CP12 TOWARDS A HIGH TC DC-SQUID MAGNETOMETER J.W.M. Hilgenkaap. R.P.J. IJsselsteiJn. A.J.H.H. Rijnders. «. Jaszczuk. P. van de Riet, J. Flokstra and H. Rogalla University of Twente. Faculty of Applied Physics. P.O. Box 217, 7500 A£ Enschede. The Netherlands. Two key elemer.s of a high Tc DC-SQUID magnetometer are the superconduc-ting ring interrupted by two Josephson Junctions (DC-SQUID) and a flux transformer consisting of i pick-up coll and a (multi-turn) Input structure. In this contribution we report on results obtained In the fabrication of both elements. The characteristics of YBa2Cu3O7_</PrBa2Cu307_<l/YBa2Cu30T.^ ramp type Junctions and DC-SQUIDs based on these Junctions produced in our group have been reported extensively lately.1 Results obtained with Josephson Junctions produced in the same way as the previously mentioned Junctions, but without the thin PrBa2Cu307.(1 barrier layer, will be presented here. Since the critical current density of these Junctions is dependent on the used etching procedure we believe that the barrier Is formed by a thin amorphlzed YBajCuaOr.,, layer rather than by a grain boundary. Voltage modulation as a function of the bias current of a DC-SQUID based on these Junctions measured at 4.2K Is shown in the figure. IV-characterlstlcs. voltage modulation and noise properties as a function of temperature will be presented. \^y\" using Ar-lon etching under an angle high quality cross-overs and vla-contact have been fabricated. These are the necessary •• - Ingredients for a multi-turn Input coll. By 1 combining two chips, one of them containing u- the DC-SQUID and the other containing the flux transformer, It Is possible to form a " high Tc DC-SQUID magnetometer. Results on m this will be reported. lJ. Gao, Preparation and characterization of high Tc superconducting thin films and devices. PhD-thesls, University of Twente (1991). 2J. Flokstra. R.P.J. IJsselsteljn. J.W.M. Hllgenkamp. Basic elements for photodeposited high Tc thin film devices. Subm. to Thin Solid Film. Risø-R-621».tN) 233 

Towards a high Tc DC-SQUID magnetometer

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