Bitterle, J.

Frank, S. R.

Hansel, J.

Hiller, M.

Schwendemann, R.

English

KITopen

KIT – The Research University in the Helmholtz AssociationElektrotechnisches InstitutKaiserstraße 12, Bldg. 11.1076131 Karlsruhe, Germanywww.eti.kit.eduNew measurement pointWaveforms loading and pre-processingWaveform smoothingCurrent offset and skew correctionDC link voltage determinationTurn-on analysisDetermine integration bordersCalculate turn-on energyCalculate dv/dt and di/dtCalculate imax and umaxCalculate commutation time.Static analysisVoltage offset correctionDetermine investigation bordersCalculate output characteristicsOptional: curve combination.Save data to result fileTurn-off analysisDetermine integration bordersCalculate turn-off energyCalculate dv/dt and di/dtCalculate imax and umaxCalculate commutation time.StartEndMeasurement ConfigurationDevice ConfigurationConfiguration FileEvaluationPlotsEvaluation ConfigurationMeasurement ControlConfiguration FileConfiguration FileTestbenchWaveformsResultsFully Automated Wide Temperature Range SemiconductorCharacterizationFrank S.R., Hansel J., Bitterle J., Schwendemann R. and Hiller M.contact: s.frank@kit.eduResultsSemiconductor Test BenchMotivation Low Temperature Power ElectronicsProperties Applications• Lower 𝑅DS, on• Lower forward voltage• Faster switching• Lower switching losses• Reduced cooling effort due to thermal isolationHigher system efficiencyWide Temperature Range Semiconductor Characterization• Precise temperature control• Ensure save temperature operating area of periphery• Whole module measurement• Prevent icing• Easy and flexible configuration, measurement, data evaluation• Affordable measurement technology  Wide temperature measurement chamberLoad chokeOscilloscope and test bench control2 kV power supplyInternal measurement chamberInternal DC linkDevice under testTempering plateLoad choke(s)Status LED andhumidity sensorVoltage measurement (passive probe)Current measurement (Rogowski coil)• Up to 1.8 kV DC link voltage• Up to 4 kA current pulsesHardware SetupControl and Data EvaluationMeasurement SetupTHS DHSDLSC TLSvLS,measvDCiSLLRσ,meas Lσ,meas DFWTHS DHSDLSC TLSvLS,measvDCiSDSDFWLLRσ,meas Lσ,meas R50Ω  L                                       Dynamic Behavior Output CharacteristicsSi-IGBT SiC-MOSFET                                                                                                                                                                                                           0°C−25°C 25°C41% on-resistance reduction• In-house developed control and evaluation software• Temperature control unit • Hermetic, nitrogen filled measurement chamber• Tempering plate instead of climatic chamber• Minimized setup (no helium chillers, curve tracers..)N2Temperature control unit (TCU)Test Bench Measurement ChamberModule at -70 °CFree-wheeling diodesGate driver with fiber-wire interfaceDUT𝑣DS / 𝑣CEmeasurementDC terminalThermal isolationLoad choke terminal𝑣GS / 𝑣GEmeasurement𝑖S / 𝑖EmeasurementStatic Measurement PCB• T = −75°C to 150°C• 2 measurement chambers• Chamber: 𝑙 x 𝑤 x ℎ = 58 x 58 x 52 cm• Tempering plate: 𝑙 x 𝑤 = 32 x 32 cm• 2.1 mF DC link capacitance• HUBER Unistat 815w TCUTopology Dynamic Measurement Topology Static MeasurementWaveforms Dynamic Measurement• Half-bridge configuration• Standard double pulse testADCSensor BatteryLWL interfaceAdaption circuit• 𝐼E,sw = 200 A• 𝑉CE,sw = 600 V• 𝑉GE = −15/15 V• 𝑅G,on = 2.7 Ω, 𝑅G,off = 2.7 Ω• 𝐶DC = 2.1 mF + 125 µF• 𝐿L = 349 µF• Lecroy HDO 4104 1 GHz, 12 bit oscilloscope• CWT UltraMini CWTUM/3/R Rogowski coil • PPE4 kV voltage probe• Temperature range: T = −75 to 150 °CWaveforms Static Measurement• Serial load choke• Turn-on 𝑇LS first, then ramp current up with 𝑇HS• Fully automated• MATLAB / Python-based  app with GUI• PT100: 0.218 °C resolution• PT1000: 0.041 °C resolution• Internal module NTCDynamic Behavior Static BehaviorTurn-On Measurement Turn-Off MeasurementDynamic BehaviorSummary Future work• Easy-to-use, flexible, wide temperature range test bench for static and dynamic characterization of power semiconductors• Operation proofed over the temperature range from −75 to 150 °C• Static characterization without additional curve tracer• Results promise more efficient converters when operated at lower temperatures• Test bench adaption to GaN semiconductors• Breakdown voltage measurements• Further semiconductor measurements over a wide temperature rangeEvaluation ProcessSoftware StructureOn-Resistance SiC MOSFETOutput Characteristic SiC MOSFET• 𝐼S,max = 475 A• 𝑉DC = 20 − 250 V• 𝑉GS = −5/15 V• 𝑅G,on = 3 Ω• 𝑅G,off = 3.9 Ω• Lecroy HDO 4104 1 GHz, 12 bitoscilloscope• CWT UltraMini CWTUM/3/R Rogowski coil• PPE 4kV voltage probe• DC link capacitance: 𝐶DC = 2.1 mF• Load inductance: 𝐿L = 71.4 µF• Temperature range: T = −75 to 150 °C- Lower forward voltage• Superconducting motors and generators• Superconducting transmission linesHybrid transmissionlineLH2GH2Offshore wind DCgridGH2PCCAC grid=~~~== ==SuperconductorElectro-lyzerHVDC                                                                                                               28 % forward voltage increase20 % forward voltage reduction• 𝐼E,max = 400 A• 𝑉DC = 20 − 250 V• 𝑉GE = −15/15 V• 𝑅G,on = 2. 7 Ω• 𝑅G,off = 2.7 ΩOutput Characteristic IGBTForward Voltage IGBTTemperature Measurement PCBI IVV

Fully Automated Wide Temperature Range Semiconductor Characterization

https://publikationen.bibliothek.kit.edu/1000162805/151438399

Fully Automated Wide Temperature Range Semiconductor Characterization

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