EXCHANGE ENHANCEMENT OF THE ELECTRON G-FACTOR IN InGaAs/InAlAs METAMORPHIC HETEROSTRUCTURES WITH A HIGH InAs CONTENT

Abstract

Magnetotransport in InGaAs/InAlAs heterostructures in tilted magnetic field is studied. It is shown that the value of the g* factor increases with an increase in the InAs content and the dependence of the g* factor on magnetic field is also revealed.Работа выполнена в рамках государственного задания по теме «Электрон» Г.р. № 122021000039-4