The article considers a large class of delayed neural networks (NNs) with extended memristors obeying the Stanford model. This is a widely used and popular model that accurately describes the switching dynamics of real nonvolatile memristor devices implemented in nanotechnology. The article studies via the Lyapunov method complete stability (CS), i.e., convergence of trajectories in the presence of multiple equilibrium points (EPs), for delayed NNs with Stanford memristors. The obtained conditions for CS are robust with respect to variations of the interconnections and they hold for any value of the concentrated delay. Moreover, they can be checked either numerically, via a linear matrix inequality (LMI), or analytically, via the concept of Lyapunov diagonally stable (LDS) matrices. The conditions ensure that at the end of the transient capacitor voltages and NN power vanish. In turn, this leads to advantages in terms of power consumption. This notwithstanding, the nonvolatile memristors can retain the result of computation in accordance with the in-memory computing principle. The results are verified and illustrated via numerical simulations. From a methodological viewpoint, the article faces new challenges to prove CS since due to the presence of nonvolatile memristors the NNs possess a continuum of nonisolated EPs. Also, for physical reasons, the memristor state variables are constrained to lie in some given intervals so that the dynamics of the NNs need to be modeled via a class of differential inclusions named differential variational inequalities
