Design of InP membrane SOA with butt-joint active passive interface

Abstract

A butt-joint SOA design for InP on Si membrane (IMOS) platform is proposed. The new design features the butt-joint interface between the SOA and passive nanophotonic waveguide, which makes the interface a factor of 2 to 6 shorter than in the current twin-guide SOAs, with possibility to reduce it further to factor of 5-10. This makes the new SOA a promising candidate for high-speed directly modulated lasers (DML) applications, where extremely short SOAs (40-100 μm long) and short distances between reflectors are usually required

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