The anisotropic magnetoresistance AMR of individual magnetic domain walls in planar nanowires
has been systematically investigated as a function of the micromagnetic wall structure, width, and
thickness of the nanowire. Experimentally derived thickness dependence of both the thin film
resistivity and the anisotropic magnetoresistance were incorporated into the calculations. We found
that the AMR value can be used to identify the wall structure and that the wall resistance is sensitive
to wire width for widths less than 300 nm. Furthermore, in comparison with the detailed analysis
here, a previous simplified domain wall model significantly underestimates domain wall resistance
in narrower wires
