Spin polarized current generation and injection into semiconductors at room
temperature are key to enable a broader range of opto-spintronic
functionalities, yet the inherent efficiency of spin injection across commonly
used semiconductor-ferromagnet interfaces is limited. Here, we demonstrate
efficient spin injection into commercially viable III-V light emitting diodes
(LED) by integrating chiral halide perovskite layers with (AlxGa1-x)0.5In0.5P
multiple quantum wells (MQW). Spin polarized current is injected via chirality
induced spin selectivity (CISS) and the spin accumulation in the III-V
semiconductor is detected via the emission of circularly polarized light with a
degree of circular polarization of up to ~ 15%. X-ray photoemission
spectroscopy (XPS) and transmission electron microscopy (TEM) cross sectional
imaging indicate a pristine perovskite/III-V interface. These findings
demonstrate chiral perovskite semiconductors transform well-developed
semiconductor platforms to enable control over spin, charge, and light