Substrate-Induced Strain in Epitaxial Lead Chalcogenides by Galvanomagnetic Effect Rotational Dependence

Abstract

On the example of the PbTe and Pb$\text{}_{0.77}$Sn$\text{}_{0.23}$Te on BaF$\text{}_{2}$ the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch-thermally induced strains in semiconductors with multivalley band structure is discussed