Afanasiev, V.

Avasarala, N. S.

Clima, S.

Devulder, W.

Donadio, G. L.

Goux, L.

Govoreanu, B.

Kar, G. S.

Kundu, S.

Opsomer, K.

Pourtois, Geoffrey

Shlyakhov, I.

Velea, A.

Witters, T.

Abstract: We investigate the electronic structure and defects of GexSe1-x, materials at the atomic level, using full-layer-thickness (5nm) amorphous models. In Ge-rich GexSe1-x, the nature of the mobility gap defects is mostly related to miscoordinated Ge. The population/localization of mobility-gap states changes solely under the effect of electricfield. Strong covalent bonds introduced by N doping in the material increase its thermal conductivity and crystallization temperature beyond 600C. C/N dopants are found to add/remove mobility-gap states in the doped systems. Our investigation sets guidelines for material design in view of improved electro-thermal device performance

Institutional Repository Universiteit Antwerpen

Atomistic Investigation of the Electronic Structure, Thermal Properties and Conduction Defects in Ge-rich GexSe1-x Materials for Selector Applications

Atomistic Investigation of the Electronic Structure, Thermal Properties and Conduction Defects in Ge-rich GexSe1-x Materials for Selector Applications

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Institutional Repository Universiteit Antwerpen