Compact thermo-diffusion based physical memristor model

Abstract

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.The threshold switching effect is critical in memristor devices for a range of applications, from crossbar design reliability to simulating neuromorphic features using artificial neural networks. The rich inherit dynamics of a metallic conductive filament (CF) formation are thought to be linked to this characteristic. Simulating these dynamics is necessary to develop an accurate memristor model. In this work we present a compact memristor model that utilizes the drift, diffusion and thermo-diffusion effects. These three effects are taken into consideration to derive the switching behavior of a memristor. The resistance of a memristor is calculated based on the evolution of a truncated cone shaped filament. The objective of this model is to achieve a realistic integration of switching mechanisms of the memristor device, while minimizing the overhead on computing resources and being compatible with circuit design tools. The model incorporates the effect of thermo-diffusion on the switching pattern, providing a different perception of the ionic transport processes, which enable the unipolar switching. SPICE simulation results provide an exact match with experimental results of Metal-Insulator-Metal (MIM) memristive devices of Ag/Si2/SiO2.07/Pt nanoparticles (NPs) configuration.Peer ReviewedPostprint (published version