In the present work we report recent results for silicon heterojunction solar cells deposited by conventional Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on textured Czochralski (CZ) silicon wafers. A new texturing technique was developed using a wet anisotropic chemical etching with a tetramethyl-ammonium hydroxide (TMAH) solution. An increase of the device photogenerated current, with maximum short circuit current of more then 36 mA/cm2 was attained. A study of the first stages of device layer growth is presented with relation to plasma ignition in PECVD systems. An original passivation technique of the amorphous/crystalline interface defects was implemented for textured wafers. Using this scheme a reproducible efficiency in excess of 16% was obtained on CZ textured wafers
