Khairir, Nurulhusna

Uno, Takahiro

Yokotani, Atsushi

ウノ, タカヒロ

カイリル, ヌルフスナ

宇野, 貴大

横谷, 篤至

We have observed the initial stage of film formation process by pulsed laser deposition (PLD) method on the Si(111)7×7 surface to obtain the information of the interface between the substrate and the films. In the present work, we have concentrated to observe the initial stage for SiC and MnSi thin films fabricated by the PLD method.
We used an ultra-high-vacuum scanning tunneling microscope (UHV-STM) for the observation. HOPG, C60 and Mn targets were used for the PLD experiment. While the substrated used in the experiment is Si(111)7×7. The number of shots varied from 1-10 shots.
From the results of the experiment, we determined the characteristic of adsorption site as well as morphological characteristic for particles in each target material. We suggested that particles ablated from HOPG and Mn target materials which have dangling bonds preferred to adsorb onto adatoms of Si(111)7×7 which have dangling bonds as well, whereas particles ablated from C60 target material preferred to adsorb onto the mechanical structure of the Si(111)7×7 surface because of the neutrality of electricity of the particle. We also suggested that HOPG and Mn target particles preferred to adsorb more on faulted half unit cell rather than unfaulted half unit cell due to the small energy difference between the particles and the faulted half unit cell. While due to the charge neutrality, the difference between the faulted half unit cell and the unfaulted half unit cell was small for the C60 target particles. Also, we suggested that HOPG and Mn target particles preferred to cluster while C60 particles preferred to spread onto the surface.
These results are expected to be useful information for clarification of mechanism of the deposition process of PLD method

ヨコタニ, アツシ

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Atomic scale observation of the initial stage of thin film formation by PLD method

Atomic scale observation of the initial stage of thin film formation by PLD method

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