Kihara, Ryouta

Uno, Takahiro

Yokotani, Atsushi

ウノ, タカヒロ

ヨコタニ, アツシ

宇野, 貴大

木原, 亮太

横谷, 篤至

Recently, thin films of Si-Mn compound in atomic scale have been studied for developing the diluted magnetic semiconductors. In this study, we focused on the behavior of Mn particles on Si(111) surface by pulsed laser deposition (PLD) method. Especially, we observed the adsorption site and its dependence on temperature of the substrate. The substrate used was cleaned Si(111) plate. Mn particles were supplied by the PLD method and a scanning tunneling microscope (STM) was used for the observation. In this work, we observed a change of adsorption site with the temperature change and the surrounding adsorbed particles. We observed the change in the absorption site and the surface structure of the substrate surrounding the Mn particles with the temperature change of RT ～ 200℃. As a result, we clarified the behavior of the particles on the Si(111) clean surface of Mn. These results are expected to be useful information for understanding a mechanism for the formation of Si-Mn very thin film

Institutional Repositories DataBase (IRDB)

PLD法を用いたSi-Mn薄膜成長の初期過程の観察

PLD法を用いたSi-Mn薄膜成長の初期過程の観察

Abstract

Similar works

Full text

Available Versions

Institutional Repositories DataBase (IRDB)