Recent theoretical works on two-dimensional molybdenum disulfide, MoS2​,
with sulfur vacancies predict that the suppression of thermal transport in
MoS2​ by point defects is more prominent in monolayers and becomes negligible
as layer number increases. Here, we investigate experimentally the thermal
transport properties of two-dimensional molybdenum disulfide crystals with
inherent sulfur vacancies. We study the first-order temperature coefficients of
interlayer and intralayer Raman modes of MoS2​ crystals with different layer
numbers and stacking orders. The in-plane thermal conductivity (κ) and
total interface conductance per unit area (g) across the 2D
material-substrate interface of mono-, bi- and tri-layer MoS2​ samples are
measured using the micro-Raman thermometry. Our results clearly demonstrate
that the thermal conductivity is significantly suppressed by sulfur vacancies
in monolayer MoS2​. However, this reduction in κ becomes less evident
as the layer number increases, confirming the theoretical predictions. No
significant variation is observed in the κ and g values of 2H and 3R
stacked bilayer MoS2​ samples