Electrical control of magnetism has been a major techonogical pursuit of the
spintronics community, owing to its far-reaching implications for data storage
and transmission. Here, we propose and analyze a new mechanism for electrical
switching of isospin, using chiral-stacked graphene multilayers, such as bernal
bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition
metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced
spin-orbit coupling from the TMD, we demonstrate electrical switching of
correlation-induced spin and/or valley polarization, by reversing a
perpendicular displacement field or the chemical potential. We substantiate our
proposal with both analytical arguments and self-consistent Hartree-Fock
numerics. Finally, we illustrate how the relative alignment of the TMDs,
together with the top and bottom gate voltages, can be used to selectively
switch distinct isospin flavors, putting forward correlated van der Waals
heterostructures as a promising platform for spintronics and valleytronics.Comment: 5 pages, 4 figures. (v2) Significant re-write correcting the magnetic
moment, SM adde