In this study, pure SnO2 and Ru-SnO2 thin films were deposited on Si and glass substrates via sol-geltechnique for humidity sensor applications. Transparent solutions were prepared from Sn and Ru basedprecursors. The solutions were deposited on Si (100) and glass substrates by using spin coatingtechnique which provides thin and smooth films. The thin films were annealed at 600oC for 1 hour in airto obtain SnO2 based films. The structural and electrical properties of the films were characterized byXRD, SEM, source/meter system respectively. The AC and DC electrical conductivity of the pure and Rudoped SnO2 films were determined. Humidity sensing properties were measured changing the electricalresistance for different humidity levels at room temperature. The humidity adsorbtion kinetics of thesefilms was investigated by quartz crystal microbalance (QCM) technique</p
