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Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks
Authors
Nobukazu Kise
YASUYUKI MIYAMOTO
+4 more
Kazuto Ohsawa
一斗 大澤
恭幸 宮本
信和 木瀬
Publication date
20 April 2017
Publisher
Abstract
Abstract is not available.
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Last time updated on 06/09/2020