Two dimensional semiconductors have attracted considerable attention owing to
their exceptional electronic and optical characteristics. However, their
practical application has been hindered by the limited light absorption
resulting from their atomically thin thickness and low quantum yield. A highly
effective approach to manipulate optical properties and address these
limitations is integrating subwavelength plasmonic nanostructures with these
monolayers. In this study, we employed electron beam lithography and
electroplating technique to fabricate a gold nanodisc (AuND) array capable of
enhancing the photoluminescence (PL) of monolayer MoS2​ giantly. Monolayer
MoS2​ placed on the top of the AuND array yields up to 150-fold PL
enhancement compared to that on a gold film. We explain our experimental
findings based on electromagnetic simulations