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Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator
Authors
Su Kong Chong
Bingqian Dai
+15Â more
Albert V. Davydov
Xiang Dong
Haoran He
Yaochen Li
Quanjun Pan
Gang Qiu
Tao Qu
Yuxing Ren
Qingyuan Shu
Lixuan Tai
Kang L. Wang
Hung-Yu Yang
Ting-Hsun Yang
Huairuo Zhang
Peng Zhang
Publication date
8 June 2023
Publisher
View
on
arXiv
Abstract
Topological insulators (TI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states, and their magnetic counterparts, magnetic topological insulators (MTI) offer magnetization without shunting and are one of the highest in SOT efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field and a small magnetization to minimize stray field. A giant switched anomalous Hall resistance of 9.2
k
Ω
k\Omega
k
Ω
is realized, among the largest of all SOT systems. The SOT switching current density can be reduced to
2.8
×
1
0
5
A
/
c
m
2
2.8\times10^5 A/cm^2
2.8
×
1
0
5
A
/
c
m
2
, and the switching ratio can be enhanced to 60%. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to
1.56
±
0.12
T
/
(
1
0
6
A
/
c
m
2
)
1.56\pm 0.12 T/ (10^6 A/cm^2)
1.56
±
0.12
T
/
(
1
0
6
A
/
c
m
2
)
and the spin Hall angle to
23.2
±
1.8
23.2\pm 1.8
23.2
±
1.8
at 5 K. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices
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oai:arXiv.org:2306.05603
Last time updated on 14/06/2023