Reducing the strain in brittle device layers is critical in the fabrication of robust flexible electronic devices. In this study, the cracking behavior of micro-patterned 500-nm-thick Ti films was investigated via uniaxial tensile testing by in situ SEM and 4-point probe measurements. Both visual observations by SEM and 4-pt resistance measurements showed that strategically patterned oval holes, off-set and rotated by 45°, had a significant effect on limiting the extent of cracking, specifically, in preventing cracks from converging. Failure with regard to electrical conduction was delayed from less than 2% to more than 10% strai
