Wafer-scale magnesium diboride thin films and devices with tunable high kinetic inductance

Abstract

Progress in superconducting device and detector technologies over the past decade have realized practical applications in quantum computers, detectors for far-IR telescopes, and optical communications. Superconducting thin film materials, however, have remained largely unchanged, with aluminum still being the material of choice for superconducting qubits, and Nb compounds for higher frequency devices. $\mathrm{MgB}_2$, known for its highest $\mathrm{T}_c$ (39 K) among metallic superconductors, is a viable material for higher frequency superconducting devices moving towards THz frequencies. However, difficulty in synthesizing thin films have prevented implementation of $\mathrm{MgB}_2$ devices into the application base of superconducting electronics, despite promising preliminary results for a number of applications. We have developed smooth and uniform $\mathrm{MgB}_2$ films on 4-inch Si wafers by depositing uniform Mg-B co-sputtered film, capping the film in situ to create a closed environment, followed by an optimized post-annealing step. We further report mature device fabrication processes and demonstrate test structures to measure properties of the films. This includes resonators with internal Q factor over $\mathrm{10}^4$ at 4.5 K and tunable high kinetic inductance (5-50 pH/$\square$ readily achieved in a 40 nm film), opening up the path for development of high frequency and high temperature $\mathrm{MgB}_2$ microdevices