Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al 2O 3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al 2O 3 layer when a suitable voltage pulse is applied. The resistance of the Al 2O 3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.Fil: Ungureanu, Mariana. CIC nanoGUNE Consolider; EspañaFil: Zazpe, Raul. CIC nanoGUNE Consolider; EspañaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. CIC nanoGUNE Consolider; EspañaFil: Stoliar, Pablo Alberto. Comisión Nacional de Energía Atómica; Argentina. CIC nanoGUNE Consolider; EspañaFil: Llopis, Roger. CIC nanoGUNE Consolider; EspañaFil: Casanova, Felix. CIC nanoGUNE Consolider; España. Basque Foundation for Science; EspañaFil: Hueso, Luis E.. CIC nanoGUNE Consolider; España. Basque Foundation for Science; Españ
