Intensive research is carried out on two-dimensional materials, in particular
molybdenum disulfide, towards high-performance transistors for integrated
circuits. Fabricating transistors with ohmic contacts is challenging due to the
high Schottky barrier that severely limits the transistors' performance.
Graphene-based heterostructures can be used in addition or as a substitute for
unsuitable metals. We present lateral heterostructure transistors made of
scalable chemical vapor-deposited molybdenum disulfide and chemical
vapor-deposited graphene with low contact resistances of about 9
k{\Omega}{\mu}m and high on/off current ratios of 10${^8}. We also present a
theoretical model calibrated on our experiments showing further potential for
scaling transistors and contact areas into the few nanometers range and the
possibility of a strong performance enhancement by means of layer optimizations
that would make transistors promising for use in future logic circuits.Comment: 23 page