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Characterization of ultra-thin tungsten layers
Authors
Tomáš Fořt
Josef Kudělka
+3 more
Vojtěch Křesálek
Tomáš Martínek
Milan Navrátil
Publication date
1 August 2017
Publisher
'Research India Publications'
Abstract
Atomic force microscopy and surface resistivity measurement were used for characterization of ultra-thin tungsten layers deposited on purified silicon with 200 nm thermic silicon dioxide substrate. Radio-frequency magnetron sputtering was used for tungsten deposition. © Research India Publications
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Last time updated on 21/10/2017