Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutor: Ignasi FinaFerroelectric materials are of potential interest for their integration in memristive devices. Polarization switching in ferroelectric thin film junctions might lead to a change of the electronic band diagram of the device, which can result in important changes of resistance. This effect is known as electroresistance. Electroresistance in 12.2, 24.3 and 36.5 nm BTO thin films junctions is investigated. It is observed that electroresistance decreases with thickness. In addition, ferroelectric characterization allows to conclude that switchable ferroelectric polarization also decreases with thickness. Thus, we conclude that electroresistance is intimately linked to the ferroelectric switching process
