The electronic structure of intrinsic magnetic topological insulator MnBi2Te4 quantum wires

Abstract

The ferromagnetic and antiferromagnetic nanostructure are crucial for fundamental spintronics devices, motivated by its potential application in spintronics, we theoretically investigate the electronic structure of the ferromagnetic and antiferromagnetic phases of the cylindrical intrinsically magnetic topological insulator $\mathrm{MnBi_{2}Te_{4}}$ quantum wires for both cases. We demonstrate that a few surface states exist between the bulk band gap in the ferromagnetic phase, with only one spin branch. In the antiferromagnetic phase, we show that three coexistent states exist between the energy gaps of the quantum wires