Impedance spectroscopy of the metal-oxide semiconductor (MOS) system has played a central role in the development of silicon-based complementary MOS (CMOS) technology over the past 50 years [1, 2]. With current research interest into alternative semiconductor channels to silicon for MOSFET and tunnel FET technologies, the measurement and interpretation of the overall impedance of the MOS structure requires detailed analysis to separate and quantify the contribution of interface states, and near interface traps (border traps), on the capacitance and conductance response, and to separate the contribution of these electrically active defect states from the ac response of minority carriers in the case of genuine inversion of the semiconductor/dielectric interface
