SOI piezoresistive low pressure sensor for high temperature environments

Abstract

Silicon-On-Insulator (SOI) wafers utilizing a novel maskless wet etching technique. The prototype has a structured square diaphragm with a concentric boss. The SOI pressure sensors have piezoresistors dielectrically isolated from each other and from the substrate by silicon dioxide. A high temperature transducer prototype has been made utilizing the fabricated sensor. A high temperature method for pressure measurements has been formed. The transducer prototype performance was measured at temperatures up to 300 0С. These SOI pressure sensors are intended for extreme environmental conditions and high operating temperatures that are often needed in military-grade applications and where it is necessary to perform sensitive low pressure measurements. Some examples include aerospace applications like aircraft engines, wind tunnels, various missiles, etc

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