In high-power applications, multiple power MOSFETs are connected in parallel
and treated as a single switch in order to handle much larger total currents.
In this paper, a parallel power MOSFETs model from the turnoff state until they
reach their steady state is introduced. The model represents the relationship
between each power MOSFET's gate voltage and the current distribution among
them. The study's key purpose is to use the model for dealing with the
asymmetry in sharing current and power loss between these semiconductor devices
during the steady state region.Comment: 10 pages, 7 figures, The 2023 INTERNATIONAL SYMPOSIUM ON ADVANCED
ENGINEERING (ISAE2023