Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Abstract
We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon single crystals annealed at 750 °С
