Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Abstract
The time dependences of changes of the electrophysical, mechanical, and light
emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is
revealed
