Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Doi
Abstract
Some aspects of measuring the thermal resistance to a constant heat flow at a
p-n junction–package region in IMPATT and light-emitting diodes are considered. We
propose a method of studying the thermal resistance of high-power light-emitting diodes.
This method makes it possible to increase accuracy of measuring the thermal resistance
by determining the temperature at a linear section of the voltage−temperature curve. A
possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V
curves is shown. This enables one to simplify calculations and increase accuracy of
measuring the thermal resistance
