Silicon carbide defects and luminescence centers in current heated 6H-SiC

Abstract

At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly understood yet. We annealed 6H-SiC substrates by current in vacuum without boron injection at the temperature of 1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination involving the deep aluminum acceptor related to the adjacent carbon vacancies and nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC matrix