'Institute of Physics, Polish Academy of Sciences'
Doi
Abstract
The electrical properties of single Cd1−xMnxTe (x= 0.07 - 0.39) crystals with a resistivity of ≈ 108 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found