CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
Radiation-induced defects in czochralski-grown silicon containing carbon and germanium
Authors
C.A. Londos Andrianakis, A. Emtsev, V.V. Ohyama, H.
Publication date
1 January 2009
Publisher
Abstract
Formation processes of vacancy-oxygen (VO) and carbon interstitial-oxygen interstitial (CiOi) complexes in electron-irradiated Czochralski-grown Si crystals (Cz-Si), also doped with Ge, are investigated. IR spectroscopy measurements are employed to monitor the production of these defects. In Cz-Si with carbon concentrations [Cs] up to 1 × 1017 cm-3 and Ge concentrations [Ge] up to 1 × 1020 cm-3 the production rate of VO defects as well as the rate of oxygen loss show a slight growth of about 10% with the increasing Ge concentration. At high concentrations of carbon [Cs] around 2 × 1017 cm-3 the production rate of VO defects is getting larger by ∼40% in Cz-Si:Ge at Ge concentrations around 1 × 10 19 cm-3 and then at [Ge] ≈ 2 × 1020 cm-3 this enlargement drops to ∼13%, thus approaching the values characteristic of lesser concentrations of carbon. A similar behavior against Ge concentration displays the production rate of CiOi complexes. The same trend is also observed for the rate of carbon loss, whereas the trend for the rate of oxygen loss is opposite. The behavior of Ge atoms is different at low and high concentrations of this isoelectronic impurity in Cz-Si. At low concentrations most isolated Ge atoms serve as temporary traps for vacancies preventing them from indirect annihilation with self-interstitials. At high concentrations Ge atoms are prone to form clusters. The latter ones are traps for vacancies and self-interstitials due to the strain fields, increasing the importance of indirect annihilation of intrinsic point defects. Such a model allows one to give a plausible explanation for the obtained results. A new band at 994 cm-1 seen only in irradiated Ge-doped Cz-Si is also studied. Interestingly, its annealing behavior was found to be very similar to that of VO complexes. © 2009 IOP Publishing Ltd
Similar works
Full text
Available Versions
Pergamos : Unified Institutional Repository / Digital Library Platform of the National and Kapodistrian University of Athens
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:lib.uoa.gr:uoadl:3037005
Last time updated on 10/02/2023