Theoretical Study Of Spur-Free Dynamic Range Of A Semiconductor Resonant Cavity Linear Interferometric Intensity Modulator

Abstract

Simulation results of the performance of a semiconductor resonant cavity linear interferometric intensity modulator are presented. Starting from the rate equations of an injection locked semiconductor laser, the phase response and stable locking range of the injection locked semiconductor laser were obtained. Within the stable locking range without any approximation on the injection power level, effects of the alpha parameter or linewidth enhancement factor of the injection locked semiconductor slave laser, injection ratio, refractive index, and the residual amplitude modulation on the spur-free dynamic range (SFDR) of the modulator are studied. © 2011 SPIE