Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels

Abstract

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented model predicts different operation modes and characteristics of DG MOSEETs with channels from heavily doped to intrinsic case, which are well verified by the 2-D numerical simulator