Undoped and Sn doped Cu2-xSnxO (x = 0, 5.0, 10.0, 15.0 and 20.0) thin films have been deposited into glass substrates by hire a fee powerful method of M-SILAR (Modified-Successive Ionic Layer Adsorption and Reaction). The Sn doping level in the starting solution become numerous from 0 to 20.0 mol.% in steps of 5.0 mol.%. The deposited films were characterized for their structural, optical, morphological and topography properties with respective instrumentation. X-ray diffraction (XRD) evaluation found out the orientation of crystalline increase of Cu2-xSnxO films, and all the films showcase single crystalline. The preferential orientation was retained in favor of (111) plane even at the highest doping level. The presence of copper in the films turned into showed by way of energy dispersive X-ray spectrometer. Average optical transmittance (UV-vis-NIR and Photoluminescence (PL)) are varied with effect of doping concentration. The stretching vibrations of Cu-O, Sn-O and O-Cu-O have been showed by using Fourier transform infrared spectroscopy (FTIR). The morphological observe has been achieved by using a Field emission scanning electron microscopy (FE-SEM) has display as decrease the particle length with increase of doping concentration. From High resolution transition electron microscopy (HR-TEM) the crystalline growth of each line are excellent within the Sn doping of 10.0 mol.%. The atomic force microscopy method changed into employed to investigate the roughness of the films and the bumpy surface revealed at 10.0 mol.% of Sn doping level
