The paper presents a straightforward modelling approach to compute the power
loss distribution in GaN HEMT based three phase and three level (3L) active
neutral point clamped (ANPC) inverters, for different pulse width modulated
techniques. Conduction and switching losses averaged over each PWM switching
period are analytically computed by starting from the operating conditions of
the AC load and data of GaN power devices. The accuracy of the proposed
analytical approach is evaluated through a circuit based power electronics
simulation tool, applied to different carrier-based PWM strategies.Comment: 10 pages, 13 figures, 24th European Conference on Power Electronics
and Applications ( IEEE EPE 2022 ECCE Europe). This work has been carried out
in the framework of the ECSEL-JU Project GaN4AP (Gallium Nitride for Advanced
Power Applications) - Grant Agreement No.10100731