Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various analytical methods are used to analyze film thickness, film composition and crystallization for samples obtained with different target-substrate distances

Davis, H. A.

Jiang, W.

Olson, J. C.

Rej, D.

Waganaar, W. J.

Yatsui, K.

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c Title: A uthor(s) : Submitted to: Preparation of Thin Films by Ablation with Anaconda Ion Beam Generator. K. Yatsui, * W. Jiang, * H. A. Davis, P-24 J. C. Olson, P-24 W. J. Waganaar, P-24 D. Rej, PDO *Laboratory of Beam Technology, Nagaoka University of Technology "BEAMS '96" Pravge, Czech Republic June 10-14, 1996 -- L O ~  Alamos N A T 1  0 N A L  L A B O R A T O R Y  Los Alarnos National Laboratory, an affirmative actionlequal opportunity employer, is operated by the Universlty ot Calltornla tor tne U.h Department Of under Contract W-7405-ENG36. By acceptance of this article, the publisher recognizes the the U.S Government retains a nonexclusive, royalty-free license to puplish or reporduce the published form of this contribution, or to allow others to  do so, for U.S Government purposes. The Los Alamos National Laboratory requests that the publisher identify this article as work performed under the auspices of the U.S Department of energy. Form No. 836 F6 !SI2629 10191 DISCLAIMER Portions of this document may be illegible in electronic image products. Images are produced from the best avaiiable original document. This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or use- fulness of any information, apparatus, product, or proctss disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any spe- cific commerciai product, process, or service by trade name, trademark, manufac-. turer, or otherwise does not necessarily constitute or imply its endorsement, recom- mendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof. PREPARATION OF THIN FILMS BY ABLATIOK FVITH ANACONDA ION BEAM GENERATOR K. Yatsui and W. Jiang Laboratoiy of Beam Technolog)?, Xagaoka University of Techiroioa, Nagaoka. ;Viigata 940-2 I .  Japan H. A. Davis, J. C. Olson, W. J. Waganaar, and D. Rej Los Aianios National Laboratory, Los Alamos, M M  87.74.7, LSA Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various analytical methods are used to analyze film thickness, film composition and crystallizability for samples obtained with different target- substrate distances. 1. Introduction The technologies relating to intense, pulsed, charge particle beams, largely supported by inertial confinement hsion programs, have been developed for several decades. In recent years, it has been realized that these technologies are also applicable in industrial fields. [ 11 For example, the ion beam evaporation (BE) is an efficient and economical method for preparation of both thin films and nanosize powders. [2-41 The IBE is a technology that evaporates the target material by irradiating a target surface with an intense, pulsed ion beam. Due to the large ion stoppins power in solids, Fig. 1 Configuration of ANACONDA ion beam diode. 600 300 200 0 100 '7 Fig.2 Typical waveforms of diode voltage and diode current in solids, very high energy density can be obtained in a small target volume close to the surface. This volume of target material is instantly evaporated and ionized expanding fiom the target surface into vacuum. When a substrate is located facing the target surface, the expanding materid strikes the substrate and cools on the substrate surface resulting in a very thin film. ANACONDA is an intense ion beam generator developed by Los Alamos National Laboratory for research on the application of ion beams to material processing. We have used the ion beam generated by ANACONDA (400 keV, 30 kA, 1 ps) to evaporate Sic target and to deposit the evaporated material on a silicon substrate. The deposited film was analyzed by using proflometry, Rutherford Backward Scattering (RBS) and X-Ray DiEaction (XRD) for film thickness, film composition and crystallizability, respectively. 2. Experimental setup Figure 1 shows the configuration of the ANACONDA ion beam diode, which is an extraction type B, diode. The ion beam is extracted from the annular anode and focused onto the target. Typical waveforms of the diode voltage and current are shown in Fig. 2. The ions are mostly carbon and oxygen with a small proton component. The ion beam intensity obtained at the focus point has a FWHM of 6 to 8 cm. The target is a sintered Sic disk with 5 cm diameter. It is located at the focus of the ion beam at an angle of 45 degrees to the axis. A silicon substrate is located in f?ont of and parallel to the target with a separation variable from 11.5 to 18 cm. The film samples on the substrate were obtained by firing 40 shots of ion beam on the target without breaking the vacuum. 3. Results of analyses In order to obtain the thickness of the film, a portion of substrate is masked during film deposition giving a sharp edge to the film. Figure 3 shows this edge obtained by using a profiIometor. Figure 3(a) and 3(b) show the samples obtained with target-substrate distances of 1 1.5 cm and 1 S cm, respectively. From Fig.3, the film thicknesses are - 0.8 p and - 0.3 pm for the target-substrate distances of 11.5 cm and 18 cm, corresponding to deposition rates of 20 . h c 4 v c - N 1 0.8 0.6 0.4 0.2 0 h c c 3=. v S 0.3 0 2 0.1 0 0 1 0 1 2 x (mm) (b) 3 4 Fig. 3 Profile of the film surface showing film thickness, for films obtained with target-substrate distance of (a) 1 1.5 cm and (b) 18 cm, respectively. &shot and 7.5 &shot, respectively. Table 1 shows the film compositions obtained by using RBS. Although the ratio of Si:C in the target is 1: 1, it is found to be 12 in the film obtained with target- substrate distance of 11.5 cm and about 1:3 in that obtained with target-substrate distance of 18 cm. In addition, some oxygen are obtained in the latter am.  Extra carbon and oxygen may come from anode material deposited on the target. The anode is made of Lucite containing carbon, oxygen and hydrogen. The sample obtained with target-substrate distance of 1 1.5 cm was analyzed by using XRD. Figure 4 shows the major peaks obtained by the XRD. It is seen from Fig. 4 that, except for the peaks of the substrate material, the observed dieaction peaks are maidy given by p-Sic, indicating that the thin film has cubic silicon carbide structure. Table 1 Film composition obtained by RBS. target-substrate Si C 0 distance (%I (%I ("/.I 11.5 cm 33 66 0 18 cm 21 62 17 - . 20 Si 1200) Si (400) 0 20 30 40 50 60 70 80 2 8 (de@ Fig. 4 XRD peaks of the Sic film on silicon substrate obtained with target-substrate distance of 1 1.5 cm. References [ 13 K. Yatsui, Laser and Particle Beams, 7 (1989) 733. [2] Y. Shimotori, M. Yokoyama, H. Isobe, S .  Harada, K. Masugata, and K. Yatsui, J. Appl. Phys., 63 (1988) 968. [3] K. Yatsui, X. D. Kang. T. Sonegawa, T .  Matsuoka, K. Masugata, Y. Shimotori, T. Satoh, S .  Furuuchi, Y. Ohuchi, T. Takeshita, and H. Yamamoto, Phys. Plqsmas, I (1994) 1730. 141 K. Yatsui, C. Grisoriu, H. Kubo, K. Masugata, and Y. Shimotori, Appl. Phys. Lett., 67 (1995) 1214. 

Preparation of thin films by ablation with ANACONDA ion beam generator

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Preparation of thin films by ablation with ANACONDA ion beam generator

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