Optically targeted, ion microbeams provide a useful means of exposing individual structures within an integrated circuit to ionizing radiation. With this tool, calibrated, low damage, charge collection spectra can be measured from specific circuit structures without preceding ion damage to the structure or surrounding circuitry. This paper presents comparisons of calibrated, low damage, ion microbeam- based charge collection measurements and three-dimensional, charge transport simulations of charge collection for isolated n- and p- channel field effect transistors under conducting and non-conducting bias conditions
