Vacancy-related color centers in two-dimensional silicon carbide monolayers
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Abstract
We examine vacancy defects in two-dimensional silicon carbide (2D-SiC) using density functional theory in order to explore their magneto-optical properties and their potential in quantum technologies. The defects include the silicon-vacancy (VSi) and two antisite-vacancy pairs (VC-CSi and VSi-CSi). We determine the characteristic hyperfine tensors and the fluorescence spectrum that are the key fingerprints of silicon-vacancy-related paramagnetic color centers in 2D-SiC and may be observed in electron paramagnetic resonance and photoluminescence experiments. In particular, we show that the VC-CSi− defect is promising candidate for a single-photon quantum emitter and qubit