Results of an experimental study of the contact heat conductance across a single diamond crystal interface with OFHC copper (Cu) are reported. Gallium-indium (GaIn) eutectic was used as an interstitial material. Contact conductance data are important in the design and the prediction of the performance of x-ray diamond monochromators under high-heat-load conditions. Two sets of experiments were carried out. In one, the copper surface in contact with diamond was polished and then electroless plated with 1 {mu}m of nickel, while in the other, the copper contact surface was left as machined. Measured average interface heat conductances are 44.7 {plus_minus}8 W/cm{sup 2}{minus}K for nonplated copper and 23.0 {plus_minus}3 W/cm{sup 2}{minus}K for nickel-plated copper. For reference, the thermal contact conductances at a copper-copper interface (without diamond) were also measured, and the results are reported. A typical diamond monochromator, 0.2 mm thick, will absorb about 44 W under a standard undulator beam at the Advanced Photon Source. The measured conductance for nickel-plated copper suggests that the temperature drop across the interface of diamond and nickel-plated copper, with a 20 mm{sup 2} contact area, will be about 10{degree}C. Therefore temperature rises are rather modest, and the accuracy of the measured contact conductances presented here are sufficient for design purposes
