MOSFET mismatch in weak/moderate inversion : model needs and implications for analog design

Abstract

PostprintTrabajo presentado en ESSCIRC 2004. 29th European Solid-State Circuits Conference, Estoril, Portugal, 2003Based on mismatch measurements performed on very different CMOS technologies and large operating temperature range, we propose to model more adequately the mismatch in weak and moderate inversion by adding a new term related to the mismatch of the body effect factor dependence on the gate voltage. The model is introduced in a top-down analog design methodology, applied to the current mirror case, revealing some nonobvious design rules as well as typical misconceptions