Relating Band Edge DOS Occupancy Statistics Associated Excited State Electrons Entropy Generation to Free Energy Loss and Intrinsic Voc Deficit of Solar Cells

Abstract

Ever science the invention of solar cells, thermodynamics has been used to assess their performance limits, guiding advances in materials science and photovoltaic technology to reduce the gap between the practical efficiencies and the thermodynamic limits to photovoltaic energy conversion. By systematically addressing the thermodynamic efficiency losses in current photovoltaic, ultrahigh efficiency photovoltaic can be expected. Currently, the non-radiative recombination of some ultrahigh efficient solar cells is almost completely suppressed, and the radiative recombination loss is then the key to restrict the further improvement of device performance. This work relates the energy band edge electronic density of states (DOS) of semiconductor absorber and transport layer, excited/transfer state electronic entropy to thermodynamically inevitable energy loss during photoelectric conversion in solar cells. On accounts of the basic limitations of thermodynamic laws on the energy conversion process, this work reveals a hidden variable that affects the photovoltaic performance and puts forward the band edge DOS engineering as a new dimension in performance optimization of solar cell apart from the traditional material and defect passivation engineering, etc. This work highlights the great importance of DOS engineering for further improving the performance of any solar cell devices