The influence of fast neutron irradiation on the
structure and spatial distribution of Ge nanocrystals (NC)
embedded in an amorphous SiO2 matrix has been
studied. The investigation was conducted by means of
laser Raman Scattering (RS), High Resolution
Transmission Electron Microscopy (HR-TEM) and X-ray
photoelectron spectroscopy (XPS). The irradiation of GeNC samples by a high dose of fast neutrons lead to a
partial destruction of the nanocrystals. Full reconstruction
of crystallinity was achieved after annealing the radiation
damage at 800
0
C, which resulted in full restoration of the
RS spectrum. HR-TEM images show, however, that the
spatial distributions of Ge-NC changed as a result of
irradiation and annealing. A sharp decrease in NC
distribution towards the SiO2 surface has been observed.
This was accompanied by XPS detection of Ge oxides and
elemental Ge within both the surface and subsurface
regio
