Dielectric aperiodic Thue-Morse structures up to 128 layers have
been fabricated by using porous silicon technology. The photonic band gap
properties of Thue-Morse multilayers have been theoretically investigated
by means of the transfer matrix method and the integrated density of states.
The theoretical approach has been compared and discussed with the
reflectivity measurements at variable angles for both the transverse electric
and transverse magnetic polarizations of light. The photonic band gap
regions, wide 70 nm and 90 nm, included between 0 and 30°, have been
observed for the sixth and seventh orders, respectively
