Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
Doi
Abstract
We consider a mode-locked quantum-dot edge-emitting semiconductor laser
consisting of a reverse biased saturable absorber and a forward biased
amplifying section. To describe the dynamics of this laser we use the
traveling wave model taking into account carrier exchange processes between a
reservoir and the quantum dots. A comprehensive parameter study is presented
and an analysis of mode-locking pulse broadening with an increase of
injection current is performed. The results of our theoretical analysis are
supported by experimental data demonstrating a strong pulse asymmetry in a
monolithic two section quantum dot mode-locked lase
